Substrate treating apparatus and substrate treating method

ABSTRACT

A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2017-0132079 filed on Oct. 12, 2017, in the KoreanIntellectual Property Office, the disclosures of which are incorporatedby reference herein in their entireties.

BACKGROUND

Embodiments of the inventive concept described herein relate to asubstrate treating apparatus and a substrate treating method.

To fabricate a semiconductor device and a liquid crystal display panel,various processes, such as photolithography, etching, ashing, ionimplanting, thin film deposition, and cleaning processes have beenperformed. Among them, the etching process, which is to remove anunnecessary region from a thin film formed on a substrate, requires ahigher selective ratio and a higher etching rate with respect to thethin film. In addition, during the above processes, a process ofperforming heat treatment the substrate may be performed.

In general, the etching process or the cleaning process is mainlyperformed by sequentially performing a chemical treatment step, a rinsetreatment step, and a dry treatment step. According the chemicaltreatment step, the thin film formed on the substrate is etched orchemicals are supplied to the substrate to remove foreign matters fromthe substrate. According to the rinse treatment step, a rinse liquid,which is pure water, is supplied onto the substrate. When the substrateis treated by using a fluid, the substrate may be heated.

SUMMARY

Embodiments of the inventive concept provide a substrate treatingapparatus and a substrate treating method, capable of efficientlytreating the substrate.

According to an exemplary embodiment, there can be provided a substratetreating apparatus including a support member to support a substrate, atreatment liquid nozzle to supply a treatment liquid to the substratepositioned on the support member, and a controller to control thetreatment liquid nozzle such that the treatment liquid supplied to thesubstrate is differently discharged in a low-flow-supply section and ahigh-flow-supply section in which an average discharge amount per houris more than an average discharge amount per hour in the low-flow-supplysection.

In addition, the controller may control the treatment liquid nozzle tostop discharging the treatment liquid in the low-flow-supply section.

Further, the substrate treating apparatus may further include a heatingmember to heat the substrate positioned on the support member.

In addition, the controller may control the heating member such that aheating temperature of the heating member in the high-flow-supplysection is lower than a heating temperature of the heating member in thelow-flow-supply section.

Further, the heating member may is provided as a lamp mounted on thesupport member.

Further, the heating member may be a resistance-heating type of hot wirepositioned in the support member.

In addition, the heating member may be a laser source to irradiate alaser to the support member.

In addition, the heating member may irradiate the laser in a form of aline beam throughout a region between a rotation center of the substrateand an outer end portion of the substrate.

Further, the treatment liquid may be phosphoric acid.

Further, the support member may be rotatably provided, and thecontroller may control the support member such that a rotation speed ofthe support member in the high-flow-supply section is higher than arotation speed of the support member in the low-flow supply section

According to an exemplary embodiment, there may be provided a substratetreating method comprising treating a substrate by supplying a treatmentliquid to the substrate, and the treatment liquid may be differentlysupplied to the substrate in a low-flow-supply section and ahigh-flow-supply section in which an average discharge amount per houris more than an average discharge amount per hour in the low-flow-supplysection.

In addition, the average discharge amount per hour in thelow-flow-supply section may be equal to or less than half of the averagedischarge amount per hour in the high-low-supply section.

Further, discharging the treatment liquid to the substrate may bestopped in the low-flow-supply section.

In addition, the substrate may be heated at a higher temperature in thelow-flow-supply section, rather than the high-flow-supply section.

Further, the substrate may be rotated at a higher speed in thehigh-flow-supply section, rather than the low-flow-supply section.

In addition, the treatment liquid may be phosphoric acid.

BRIEF DESCRIPTION OF THE FIGURES

The above and other objects and features of the inventive concept willbecome apparent by describing in detail exemplary embodiments thereofwith reference to the accompanying drawings.

FIG. 1 is a plan view illustrating a substrate treating apparatus,according to an embodiment of the inventive concept;

FIG. 2 is a view illustrating a process chamber, according to anembodiment of the inventive concept;

FIG. 3 is a partial sectional view illustrating a support member,according to an embodiment of the inventive concept;

FIG. 4 is a graph illustrating a heating temperature of a heatingmember;

FIGS. 5 and 6 are views illustrating the state of discharging a chemicalliquid to the substrate by a treatment liquid nozzle;

FIG. 7 is a graph illustrating a heating temperature of a heatingmember, according to another embodiment;

FIG. 8 is a graph illustrating a heating temperature of a heatingmember, according to still another embodiment;

FIG. 9 is a view illustrating a process chamber, according to anotherembodiment;

FIG. 10 is a view illustrating a laser irradiated to a substrate,according to an embodiment; and

FIG. 11 is a view illustrating a process chamber, according to stillanother embodiment.

DETAILED DESCRIPTION

Hereinafter, an embodiment of the inventive concept will be described inmore detail with reference to the accompanying drawings. The embodimentsof the inventive concept may be modified in various forms, and the scopeof the inventive concept should not be construed to be limited by theembodiments of the inventive concept described in the following. Theembodiments of the inventive concept are provided to describe theinventive concept for those skilled in the art more completely.Accordingly, the shapes and the like of the components in the drawingsare exaggerated to emphasize clearer descriptions.

FIG. 1 is a plan view illustrating a substrate treating apparatus,according to an embodiment of the inventive concept.

Referring to FIG. 1, a substrate treating apparatus 1 may have an indexmodule 10 and a process treating module 20. The index module 100 maycontain a load port 120 and a feeding frame 140. The load port 120, thefeeding frame 140, and the process treating module 20 may besequentially arranged in a row. Hereinafter, a direction in which theload port 120, the feeding frame 140, and the process treating module 20are arranged will be referred to as a first direction 12, a directionthat is perpendicular to the first direction 12 when viewed from the topwill be referred to as a second direction 14, and a direction that isnormal to a plane containing the first direction 12 and the seconddirection 14 will be referred to as a third direction 16.

A carrier 18 having a substrate W received therein is seated on the loadport 120. A plurality of load ports 120 are provided, and are arrangedin the second direction 14 in a line. The number of the load ports 120may increase or decrease depending on the process efficiency of theprocess treating module 20 or a footprint. The carrier 18 has aplurality of slots (not illustrated) to receive the substrates “W”arranged horizontally to the ground surface. A front opening unified pod(FOUP) may be used as the carrier 18.

The process treating module 20 includes a buffer unit 220, a feedingchamber 240, and a process chamber 260. The feeding chamber 240 isdisposed such that the lengthwise direction thereof is in parallel tothe first direction 12. Process chambers 260 are arranged at oppositesides of the feeding chamber 240. The process chambers 260 may bearranged at one side and the other side of the feeding chamber 240 so asto be arranged symmetrically to each other about the feeding chamber240. The plurality of process chambers 260 may be provided at one sideof the feeding chamber 240. Some of the process chambers 260 arearranged in the lengthwise direction of the feeding chamber 240.Furthermore, others of the process chambers 260 are arranged to bestacked on each other. That is, the process chambers 260 may be arrangedin an A-by-B matrix at the one side of the feeding chamber 240. In thiscase, A is the number of the process chambers 260 aligned in a line inthe first direction 12, and B is the number of the process chambers 260aligned in a line in the third direction 16. When four or six processchambers 260 are provided at one side of the feeding chamber 240, theprocess chambers 260 may be arranged in 2×2 or 3×2. The number of theprocess chambers 260 may increase or decrease. Unlikely, the processchambers 260 may be provided only at any one side of the feeding chamber240. In addition, a process chamber 260 may be provided in a singlelayer at one side and opposite sides of the feeding chamber 240.

The buffer unit 220 is interposed between a feeding frame 140 and thefeeding chamber 240. The buffer unit 220 provides a space in which thesubstrate W stays before the substrate is carried between the feedingchamber 240 and the feeding frame 140. A slot(s) (not illustrated) thata substrate W is placed may be provided in the buffer unit 220. Aplurality of slots (not illustrated) may be provided to be spaced apartfrom each other in the third direction 16. The buffer unit 220 is openin surfaces facing the feeding frame 140 and the feeding chamber 240.

The feeding frame 140 carries the substrate “W” between a carrier 18seated in the load port 120 and the buffer unit 220. The feeding frame140 includes an index rail 142 and an index robot 144. The index rail142 is provided such that the lengthwise direction thereof is inparallel to the second direction 14. The index robot 144 is installed onthe index rail 142 to move in the second direction 14 along the indexrail 142. The index robot 144 may contain a base 144 a, a body 144 b,and an index arm 144 c. The base 144 a may be installed to be movablealong the index rail 142. The body 144 b may be joined to the base 144a. The body 144 b may be provided to be movable on the base 144 a in thethird direction 16. Furthermore, the body 144 b may be provided to berotatable on the base 144 a. The index arm 144 c may be joined to thebody 144 b such that the index arm 144 c is movable forward and backwardwith respect to the body 144 b. A plurality of index arms 144 c may beprovided, and may be driven independently from each other. The indexarms 144 c may be arranged to be stacked on each other while beingspaced apart from each other in the third direction 16. Some of theindex arms 144 c are used when carrying the substrates “W” to thecarrier 18 from the process treating module 20, and other of the indexarms 144 c may be used when carrying the substrates W from the carrier18 to the process treating module 20. This structure may preventparticles, which are produced from the substrates “W” before the processtreatment, from sticking to the substrates “W” after the processtreatment in the process that the index robot 144 introduces andwithdraws the substrates “W” into and out.

The feeding chamber 240 carries the substrate W between any two of thebuffer unit 220 and the process chamber 260, and between the processchambers 260. The feeding chamber 240 includes a guide rail 242 and anindex robot 244. The guide rail 242 is disposed such that the lengthwisedirection thereof is parallel to the first direction 12. The main robot244 is installed on the guide rail 242 to linearly move in the firstdirection 12 on the guide rail 242. The main robot 244 may contain abase 244 a, a body 244 b, and a main arm 244 c. The base 244 a may beinstalled to be movable along the guide rail 242. The body 244 b may bejoined to the base 244 a. The body 244 b may be provided to be movableon the base 244 a in the third direction 16. Furthermore, the body 244 bmay be provided to be rotatable on the base 244 a. The main arm 244 cmay be joined to the body 244 b such that the main arm 244 c is movableforward and backward with respect to the body 244 b. A plurality of mainarms 244 c may be provided, and may be driven independently from eachother. The main arms 244 c may be arranged to be stacked on each otherwhile being spaced apart from each other in the third direction 16.

The process chamber 260 may perform a process treatment with respect tothe substrate W. Although all processes performed in the process chamber260 are the same, at least two different processes may be performed.

FIG. 2 is a view illustrating a process chamber, according to anembodiment of the inventive concept.

Referring to FIG. 2, the process chamber 260 includes a support member1000, a treatment liquid nozzle 1300, a heating member 1400, and acontroller 1500.

The support member 1000 supports a substrate S during the process. Thesupport member 1000 is provided such that the top surface of the supportmember 1000 has a preset area. For example, the support member 1000 hasan area wider than an area of the substrate S, and supports thesubstrate S by using a pin 1100 provided on the top surface thereof.Accordingly, the substrate S may be supported in the state that thebottom surface of the substrate S may be spaced apart from the topsurface of the support member 1000. In addition, the support member 1000may be provided to fix the substrate S in a manner of vacuum-sucking thesubstrate S in the state that the top surface of the support member 1000has an area wider or narrower than the area of the substrate S. Thesupport member 1000 may be provided to be rotatable by power applied bythe driver 1110 and may rotate the substrate S during the process.

The treatment liquid nozzle 1300 discharges a treatment liquid towardthe substrate S placed on the support member 1000 to treat the substrateS. The treatment liquid may include phosphoric acid. In addition, thetreatment liquid may be chemicals such as sulfuric acid (H₂SO₄), nitricacid (HNO₃), ammonia (NH₃) and the like.

The heating member 1400 heats the substrate S during the process. Forexample, the heating member 1400 may be provided in the form positionedinside the support member 1000.

FIG. 3 is a partial sectional view illustrating the support member,according to an embodiment.

Referring to FIG. 3, the support member 1000 includes a chuck stage 1010and the heating member 1400.

The chuck stage 1010 provides an upper structure of the support member1000. A receiving space 1011 is formed inside the chuck stage 1010. Anupper portion of the receiving space 1011 may be shielded by atransmissive plate 1020. The transmissive plate 1020 may have highertransmittance for energy supplied by the heating member 1400. Forexample, the transmissive plate 1020 may include a quartz material.

The heating member 1400 may be provided inside the chuck stage 1010. Theheating member 1400 may be a lamp or a resistance-heating type of a hotwire. The heating member 1400 may be provided in a ring shape. Aplurality of heating members 1400 may have different radiuses from therotational center of the chuck stage 1010. The plurality of heatingmembers 1400 may be individually controlled in terms of intensity oflight irradiated from the heating members 1400 or heat emitted from theheating members 1400.

The heating member 1400 may be provided in the form positioned on thesupport plate 1030. For example, the support plate 1030 may bepositioned in the receiving space 1011 of the chuck stage 1010 and theheating member 1400 may be provided in the form supported by the supportplate 1030. The support plate 1030 may assist the heating member 1400such that the heating member 1400 emits light or heat toward the upperportion of the chuck stage 1010. For example, the top surface of thesupport plate 1030 may be formed of a metallic material. A passage forcooling the heating member 1400 is provided in a form that is spacedfrom the inner surface of the chuck stage 1010 above or below thesupport plate 1030. For example, the passage for cooling the heatingmember 1400 may be provided in the receiving space 1011.

A partition 1031 may be provided in the heating members 1400. When aplurality of heating members 1400 are provided, the partition 1031 maybe interposed between adjacent heating members 1400. In addition, thepartition 1031 may be formed outside the outermost heating member. Thepartition 1031 may reduce the influence which is exerted on a regionadjacent to a region heated by the heating member 1400 by the heatedregion. Accordingly, the control efficiency of the region heated by eachheating member 1400 may be improved.

FIG. 4 is a graph illustrating the heating temperature of the heatingmember.

With further reference to FIG. 4, the controller 1500 controlscomponents of the process chamber 260. The controller 1500 controls theheating member 1400 to perform a high-temperature heating process and alow-temperature heating process. A high-temperature-heating temperatureTH has a set value higher than a set value of a low-temperature-heatingtemperature TL.

Each of high-temperature-heating sections t1-t2 and t3-t4 appear atleast one time after low-temperature-heating sections 0-t1, t2-t3, andt4-t5 or between 0-t1 and t2-t3 and between t3-t3 and t4-t5,respectively. When each of the high-temperature-heating sections t1-t2and t3-t4 appears at least two times, the high-temperature-heatingsections t1-t2 and t3-t4 may have an equal duration or differentdurations. In addition, the low-temperature-heating sections 0-t1,t2-t3, and t4-t5 may have an equal duration or different durations.Further, the durations of the low-temperature-heating sections 0-t1,t2-t3, and t4-t5 may be equal to or different from the durations of thehigh-temperature-heating sections t1-t2 and t3-t4. For example, thehigh-temperature-heating sections t1-t2 and t3-t4 and thelow-temperature-heating sections 0-t1, t2-t3, and t4-t5 are started andlasted for 10 seconds. Then, the high-temperature-heating sections t1-t2and t3-t4 and the low-temperature-heating sections 0-t1, t2-t3, andt4-t5 are alternately maintained by 10 seconds for a preset period oftime. For example, the duration that the substrate S is subject to heattreatment by the heating member 1400 may be 1 minute.

FIGS. 5 and 6 are views illustrating the state of discharging a chemicalliquid to the substrate by the treatment liquid nozzle.

Referring to FIGS. 5 and 6, the controller 1500 controls the treatmentliquid nozzle 1300 to supply various amounts of treatment liquid to thesubstrate S depending on times.

The controller 1500 controls the treatment liquid nozzle 1300 todischarge the treatment liquid to the substrate S, based on whether aflow section is a high-flow-supply section or a low-flow-supply section.An average amount of discharged treatment liquid per time in thelow-flow-supply section is less than an average amount of dischargedtreatment liquid per time in the high-flow-supply section. The averageamount of discharged treatment liquid in the low-flow-supply section ismade to be ½ less than the average amount of discharged treatment liquidin the high-flow-supply section. For example, the controller 1500 maycontrol the treatment liquid nozzle 1300 such that discharging thechemical liquid is stopped in the low-flow-supply section.

The low-flow-supply section is overlapped with thehigh-temperature-heating sections t1-t2 and t2-t4 for more significanttime, rather than the low-temperature-heating sections 0-t1, t2-t3, andt4-t5. The high-flow-supply section is overlapped with thelow-temperature-heating sections 0-t1, t2-t3, and t4-t5 for moresignificant time, rather than the high-temperature-heating sectionst1-t2 and t3-t4. For example, Low-flow-supply sections may be matchedwith the high-temperature-heating sections t1-t2 and t3-t4 andhigh-flow-supply sections may be matched with low-temperature-heatingsections 041, t2-t3, and t4-t5.

The degree that the substrate S is treated by the treatment liquiddepends on the substrate S and the temperature of the treatment liquid.For example, as the temperatures of the substrate S and the treatmentliquid are increased, the treatment rate and the treatment efficiency ofthe substrate S are increased by phosphoric acid. Meanwhile, thesubstrate S is rotated while the treatment liquid is being supplied.Accordingly, the treatment liquid, which is heated after being suppliedto the substrate S, is scattered out of the substrate S, and a newtreatment liquid, which is not heated, is discharged to the substrate S.Accordingly, the heating efficiency by the support member 1000 isdegraded.

According to the inventive concept, the substrate treating apparatusforms a low-flow-supply section that the treatment liquid is lesssupplied, during the treatment process for the substrate S. Accordingly,as an amount of treatment liquid heated with calorie supplied by theheating member 1400 is reduced, the substrate S and the treatment liquidare heated at a higher temperature within a shorter period of time,thereby increasing the reactivity between the treatment liquid and thesubstrate S. In addition, the time that the low-flow-supply section isoverlapped with the high-temperature-heating sections t1-t2 and t3-t4may be greatly increased and thus the efficiency of heating thesubstrate S and the treatment liquid may be improved.

The controller 1500 may control the support member 1000 such that thesupport member 1000 rotates at different rotation speeds in thelow-flow-supply section and the high-flow-supply section. The controller1500 may control the support member 1000 such that the rotational speedof the support member 1000 in the low-flow-supply section is lower thanthe rotational speed of the support member 1000 in the high-flow-supplysection. Therefore, in the case of the treatment liquid supplied to thesubstrate S in the low-flow-supply section, although the time that thetreatment liquid remains on the substrate S is increased and a smalleramount of treatment liquid is supplied to the substrate S, an amount ofthe treatment liquid remaining on the substrate S may be maintained tobe a set amount. In addition, when the treatment for the substrate S isstarted using the treatment liquid, the controller 1500 controls thetreatment liquid nozzle 1300 and the heating member 1400 depending onthe high-flow-supply sections and the low-flow-supply sections 0-t1,t2-t3, t4-t5, such that the treatment liquid is supplied to thesubstrate S as soon as the treatment for the substrate S is started.

FIG. 7 is a graph illustrating a heating temperature of a heatingmember, according to another embodiment.

Referring to FIG. 7, at least two heating temperatures may be formed inlow-temperature-heating sections 0-t1, t2-t3, and t4-t5. For example, afirst low-temperature-heating temperature TL1 may be formed to be higherthan a second low-temperature heating temperature TL2. In this case, thedifference between the first low-temperature-heating temperature TL1 andthe second low-temperature-heating temperature TL2 may be formed to beless than the difference between the first low-temperature-heatingtemperature TL1 and the high-temperature-heating temperature TH.

The relation between the high-temperature-heating sections t1-t2 andt3-t4 and the low-temperature-heating-sections 0-t1, t2-t3, and t4-t5and amounts of discharged treatment liquids are the same as thoseillustrated in FIGS. 6 and 7. Accordingly, the redundant details thereofwill be omitted in the following description.

FIG. 8 is a graph illustrating a heating temperature of the heatingmember, according to still another embodiment.

Referring to FIG. 8, at least two heating temperatures may be formed inhigh-temperature-heating sections t1-t2 and t3-t4. For example, a firstlow-temperature-heating temperature TH1 may be formed to be higher thanthe value of a second low-temperature heating temperature TH2. In thiscase, the difference between the first high-temperature-heatingtemperature TH1 and the second high-temperature-heating temperature TH2may be formed to be less than the difference between the secondhigh-temperature-heating temperature TH2 and the low-temperature-heatingtemperature TL.

The relation between the high-temperature-heating sections t1-t2 andt3-t4 and the low-temperature-heating-sections 0-t1, t2-t3, and t4-t5and amounts of discharged treatment liquids are the same as thoseillustrated in FIGS. 6 and 7. Accordingly, the redundant details thereofwill be omitted in the following description.

FIG. 9 is a view illustrating a process chamber, according to anotherembodiment.

Referring to FIG. 9, a process chamber 260 a includes a support member1000 a, a treatment liquid nozzle 1300 a, and a heating member 1400 a.

The heating member 1400 a may be provided in the form of a laser sourcewhich is spaced apart from the support member 1000 a by a set distanceto irradiate a laser to a substrate positioned on the support member1000 a.

FIG. 10 is a view illustrating a laser irradiated onto the substrate,according to an embodiment.

Referring to FIG. 10, the heating member 1400 a may irradiate a laser Lain the form of a line beam having a set length. The laser La may beirradiated throughout a region between the rotation center of thesubstrate S and an outer end portion of the substrate S. Accordingly,when the substrate S is rotated, the laser La may be irradiatedthroughout the whole top surface of the substrate S.

In addition, the heating member 1400 a may be provided such that thelaser having the set area is irradiated while moving between therotation center of the substrate S and the outer end portion of thesubstrate S.

The relation between the manner that the heating member 1400 a heats thesubstrates S as time elapses and amounts of supplied treatment liquidsare the same as those illustrated in FIGS. 4 to 8. Accordingly, theredundant details thereof will be omitted in the following description.

FIG. 11 is a view illustrating a process chamber, according to anotherembodiment.

Referring to FIG. 11, a process chamber 260 b includes a support member1000 b, a treatment liquid nozzle 1300 b, and a heating member 1400 b

The heating member 1400 b may be spaced upward from the support member1000 b by a set distance and provided in the form of radiatively heatingthe substrate S positioned on the support member 1000 b. For example,the heating member 1400 b may be provided in the form of heating thesubstrate S using heat emitted from a lamp and a resistor array.

The relation between the manner that the heating member 1400 a heats thesubstrates S as time elapses and amounts of treatment liquids suppliedby the treatment liquid nozzle 1300 b are the same as those illustratedin FIGS. 4 to 8. Accordingly, the redundant details thereof will beomitted in the following description.

According to an embodiment of the inventive concept, a substratetreating apparatus and a substrate treating method may efficiently treata substrate.

The above description has been made for the illustrative purpose.Furthermore, the above-mentioned contents describe the exemplaryembodiment of the inventive concept, and the inventive concept may beused in various other combinations, changes, and environments. That is,the inventive concept can be modified and corrected without departingfrom the scope of the inventive concept that is disclosed in thespecification, the equivalent scope to the written disclosures, and/orthe technical or knowledge range of those skilled in the art. Thewritten embodiment describes the best state for implementing thetechnical spirit of the inventive concept, and various changes requiredin the detailed application fields and purposes of the inventive conceptcan be made. The written embodiment describes the best state forimplementing the technical spirit of the inventive concept, and variouschanges required in the detailed application fields and purposes of theinventive concept can be made. Furthermore, it should be construed thatthe attached claims include other embodiments.

While the inventive concept has been described with reference toexemplary embodiments thereof, it will be apparent to those of ordinaryskill in the art that various changes and modifications may be madethereto without departing from the spirit and scope of the inventiveconcept as set forth in the following claims.

What is claimed is:
 1. A substrate treating apparatus comprising: asupport member to support a substrate; a treatment liquid nozzle tosupply a treatment liquid to the substrate positioned on the supportmember; and a controller to control the treatment liquid nozzle suchthat the treatment liquid supplied to the substrate is differentlydischarged in a low-flow-supply section and a high-flow-supply sectionhaving an average discharge amount per hour which is more than anaverage discharge amount per hour in the low-flow-supply section.
 2. Thesubstrate treating apparatus of claim 1, wherein the controller controlsthe treatment liquid nozzle to stop discharging the treatment liquid inthe low-flow-supply section.
 3. The substrate treating apparatus ofclaim 1, further comprising: a heating member to heat the substratepositioned on the support member;
 4. The substrate treating apparatus ofclaim 3, wherein the controller controls the heating member such that aheating temperature of the heating member in the high-flow-supplysection is lower than a heating temperature of the heating member in thelow-flow-supply section.
 5. The substrate treating apparatus of claim 3,wherein the heating member is provided as a lamp mounted on the supportmember.
 6. The substrate treating apparatus of claim 3, wherein theheating member is provided as a resistance-heating type of hot wirepositioned mounted on the support member.
 7. The substrate treatingapparatus of claim 3, wherein the heating member is provided as a lasersource to irradiate a laser to the support member.
 8. The substratetreating apparatus of claim 7, wherein the heating member irradiates thelaser in a form of a line beam throughout a region between a rotationcenter of the substrate and an end portion of the substrate.
 9. Thesubstrate treating apparatus of claim 1, wherein the treatment liquid isphosphoric acid.
 10. The substrate treating apparatus of claim 1,wherein the support member is rotatably provided, and wherein thecontroller controls the support member such that a rotation speed of thesupport member in the high-flow-supply section is higher than a rotationspeed of the support member in the low-flow supply section
 11. Asubstrate treating method comprising: treating a substrate by supplyinga treatment liquid to the substrate, wherein the treatment liquid isdifferently supplied to the substrate in a low-flow-supply section and ahigh-flow-supply section having an average discharge amount per hourwhich is more than an average discharge amount per hour in thelow-flow-supply section.
 12. The substrate treating method of claim 11,wherein the average discharge amount per hour in the low-flow-supplysection is equal to or less than half of the average discharge amountper hour in the high-low-supply section.
 13. The substrate treatingmethod of claim 11, wherein discharging the treatment liquid to thesubstrate is stopped in the low-flow-supply section.
 14. The substratetreating method of claim 11, wherein the substrate is heated at a highertemperature in the low-flow-supply section than a temperature in thehigh-flow-supply section.
 15. The substrate treating method of claim 11,wherein the substrate is rotated at a higher rotation speed in thehigh-flow-supply section than a rotation speed in the low-flow-supplysection.
 16. The substrate treating method of claim 11, wherein thetreatment liquid is phosphoric acid.